IIT Gandhinagar: 10 Years of ExcellenceNews

Jhuma Saha

  1. Faculty
  2. Electrical Engineering

  3. Jhuma Saha

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Jhuma Saha

Assistant Professor, Electrical Engineering

  • BE: Chhattisgarh Swami Vivekananda Technical University, Bhilai, 2010
  • MTech: Indian School of Mines Dhanbad, 2014
  • PhD: Indian Institute of Technology Bombay, 2019



  • Work Experience

    • Research Associate, Indian Institute of Technology Bombay, (Jul 2019 - Jan 2020)
    • Junior Research Fellow, IIT (ISM) Dhanbad, (Jul 2014 - Dec 2016)
    • Lecturer, College of Engineering and Management, Raipur, (Jun 2010 - Jun 2012)

  • Selected Publications

    1. J. Saha, Praveen Raut, R. Ramavath, D. Panda, D. Das and S. Chakrabarti. “Enhancing the Performance of Heterogeneously Coupled InAs Stranski-Krastanov on Submonolayer Quantum Dot Heterostructures,” Superlattices and Microstructures, pp. 106260, 2019. (I.F. 2.385)

    2. J. Saha, D. Panda, D. Das, V. Chavan and S. Chakrabarti, “Enhanced Luminescence and Optical Performance through Strain Minimization in Self-assembled InAs QDs using Dual quaternary-ternary/ternary-quaternary Capping,” Journal of Luminescence, vol. 197, pp. 297-303, 2018. (I.F. 2.732)

    3. J. Saha, D. Panda, and S. Chakrabarti, “Tuning the optoeletronic characteristics of strain coupled InAs/GaAs bilayer quantum dot heterostructures through compositional and structural variabilities”, Superlattices and Microstructures, vol. 120, pp. 335-343, 2018. (I.F. 2.385)

    4. J. Saha, D. Panda, and S. Chakrabarti. "Impact of Sb Composition on Strain Profile of GaAs1-xSbx Capped InAs Quantum Dots." IEEE Transactions on Nanotechnology, vol. 18, pp. 234-239, 2019. (I.F. 2.292)

    5. J. Saha, D. Panda, B. Tongbram, D. Das, V. Chavan, and S. Chakrabarti. "Higher performance optoelectronic devices with In0. 21Al0. 21Ga0. 58As/In0. 15Ga0. 85As capping of III-V Quantum Dots." Journal of Luminescence, vol. 210, pp. 75-82, 2019. (I.F. 2.732)

Research Interests

  • ● Characterization of III-V based Quantum Dot based devices.
  • ● Theoretical simulation of In(Ga)As/GaAs based quantum dot heterostructures for optoelectronic devices.
  • ● Study of wide band gap (WBG) based
    nanostructures.